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 Patent Profile

Patent No: IN494456 [India] Application No: 1221/DEL/2015
Title: An improved magnetic multilayer structure for sensor applications and a process for preparation thereof
Issue Date: 08-01-2024 File Date: 01-05-2015
Inventor(s): Prasanta Chowdhury; Harish Chandra Barshilia; Jakeer Khan; Murali Krishana; Prabhanjan Kulkarni
IPC Classification: H01L
Abstract: Improved magnetic multilayer structure for GMR based magnetic sensor applications and process thereof Existing GMR based  magnetic multilayer structure as referred in prior art are magnetic sensor useful for different applications. These structures are  associated with low hysteresis, low saturation field and high thermal stability (150°C) along with other  properties. Present invention discloses improved magnetic multilayer structure for sensor  applications comprising a stack of bottom  buffer layer, spacer layer, magnetic and non-magnetic bi-layers and top ,protective layer deposited on Silicon Nitride coated . silicon  wafer substrateusing ultra high vacuum sputtering system, introducing oxygen as gas impurity during deposition of layers. Use of  oxygen as gas impurity have effect of reducing grain growth and hence improved the interfacial roughness, which results in better  GMR properties. Present invention also discloses a fabrication process for manufacturing the said magnetic multilayer structure using  ultra high vacuum sputtering system. Magnetic multilayer structure of present invention exhibited low hysteresis (9%), high thermal  stabi1it.y (225OC in air ) and low saturation field (200 G)
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Industrial Applications Chemistry, Chemical Processes Polymers [Chemistry, Chemical Processes] Magnetism [Physics] Sensors [Electronics]