| Patent No: | IN494456 [India] | Application No: | 1221/DEL/2015 |
| Title: | An improved magnetic multilayer structure for sensor applications and a process for preparation thereof | ||
| Issue Date: | 08-01-2024 | File Date: | 01-05-2015 |
| Inventor(s): | Prasanta Chowdhury; Harish Chandra Barshilia; Jakeer Khan; Murali Krishana; Prabhanjan Kulkarni | ||
| IPC Classification: | H01L | ||
| Abstract: | Improved magnetic multilayer structure for GMR based magnetic sensor applications and process thereof Existing GMR based magnetic multilayer structure as referred in prior art are magnetic sensor useful for different applications. These structures are associated with low hysteresis, low saturation field and high thermal stability (150°C) along with other properties. Present invention discloses improved magnetic multilayer structure for sensor applications comprising a stack of bottom buffer layer, spacer layer, magnetic and non-magnetic bi-layers and top ,protective layer deposited on Silicon Nitride coated . silicon wafer substrateusing ultra high vacuum sputtering system, introducing oxygen as gas impurity during deposition of layers. Use of oxygen as gas impurity have effect of reducing grain growth and hence improved the interfacial roughness, which results in better GMR properties. Present invention also discloses a fabrication process for manufacturing the said magnetic multilayer structure using ultra high vacuum sputtering system. Magnetic multilayer structure of present invention exhibited low hysteresis (9%), high thermal stabi1it.y (225OC in air ) and low saturation field (200 G) | ||