Patent Profile
| Patent No: | IN567076 [India] | Application No: | 202011005844 |
| Title: | A magneto resistance based current sensor and sensing method thereof | ||
| Issue Date: | 02-06-2025 | File Date: | 11-02-2020 |
| Inventor(s): | Prasanta Chowdhury; Harish Chandra Barshilla; Jakeer Khan; Umesh Pramod Borole | ||
| IPC Classification: | G01R15/20, G01R33/09, B82Y25/00, G01R15/18, G01R15/14 | ||
| Abstract: | The magnetoresistance based current sensor and sensing method discloses a current sensor based on multilayer GMR elements that comprise current carrying conductor, multilayer GMR elements connected in full Wheatstbne bridge and bias magnet assembled in an enclosure. The present invention is capable of implementing current sensing ranges from 1 A to 1000 A with the permissible dimensions of conductor. The disclosed method allows characteristics conversion of GMR sensor with very less influence of temperature dependence of the magnetic field bias using closed loop technique which is essential to convert unipolar characteristic into linear, bipolar characteristics. The present invention also allows the realization of the intrusive current sensor with low insertion loss. The present invention is simple, compact and commercially viable. This invention is advantageous in a manner for bus bar current sensor for intrusive sensing in power distribution box and also scaling of power electronics systems with high density. |
||
CSIR-National Aerospace Laboratories[CSIR-NAL]
: director[at]nal[dot]res[dot]in
:91-80-25086000
:https://www.nal.res.in
: director[at]nal[dot]res[dot]in
:91-80-25086000
:https://www.nal.res.in
Industrial Applications
Electromagnetics [Physics]
Sensors [Electronics]