New Invention Profile
| Publication No: | IN202311063612 [India] | Application No: | IN202311063612 |
| Title: | A BETA-GALLIUM OXIDE SEMICONDUCTOR OHMIC CONTACT STRUCTURE AND PROCESS OF FABRICATION THE SAME | ||
| Publication Date: | 28-03-2025 | File Date: | 21-09-2023 |
| Inventor(s): | Pharyanshu Kachhawa; Nidhi Chaturvedi; Deepak Kumar Panwar | ||
| IPC Classification: | H01L 29/786, H01L 21/02, H01L 21/285, H01L 29/45, G11C 16/04 | ||
| Abstract: | A beta-Gallium Oxide semiconductor ohmic contact structure and process of fabrication the same A ?-Gallium Oxide semiconductor ohmic contact structure and process of fabrication the same comprising a field effect transistor (11), sapphire substrate element (1), acts as insulating substrate, an epilayer element (2) made up of thick moderately Si-doped of 1 x 1018/cm3 gallium oxide showing n-type property having thickness of 1 ?m, a gate dielectric layer element (5) having of any dielectric layer Al2O3, Si3N4 or HfO2. The invention provides contact specifications having contact Resistance Rc of 0.01052 O.m; sheet resistance Rsh of 1.54 kO/sq, contact resistivity ?c of 2.24x10-8O.m2, pre-treatment prior metal of Ar reactive ion etching, Epitaxy of ?-Gallium oxide on Sapphire, orientation of (-201), Epilayer doping of 1 x 1018, Metal stack of Ti/Au (20/150 nm). Further, the invention provides a process of fabrication ?-Gallium Oxide semiconductor ohmic contact structure comprising a plurality of steps. |
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