New Invention Profile
| Publication No: | IN202211074392 [India] | Application No: | 202211074392 |
| Title: | A method of fabricating a contact-less terahertz mems switch | ||
| Publication Date: | 28-06-2024 | File Date: | 21-12-2022 |
| Inventor(s): | Deepak Bansal; Maninder Kaur; Amit Kumar; Prem Kumar; Mahanth Prasad | ||
| IPC Classification: | H01H 59/00, B81C 1/00, B81B 3/00, H01H 1/00, H01P1/20 | ||
| Abstract: | A method of fabricating a contact-less terahertz MEMS switch MEMS switch is the heart of the RF/microwave/terahertz technology, but stiction and contact degradation are the most common reasons for these devices' failures. One of the solutions to tackle the contact issues is to make compact contact. However, a low contact area leads to high contact resistance and poor insertion loss. On the other hand, high contact area leads to stiction issues. The present invention proposes a novel approach to mitigate the contact problem. A contact-less reliable switch for terahertz applications is presented. Further, with an increase in frequency to the terahertz range, the response of the ohmic MEMS switch also degrades due to inductive effects. The electrical response of the switch is also improved using the capacitive coupling technique to nullify the effect of inductance. Insertion loss, isolation and return loss of the switch are also improved using a contact-less configuration. The fabrication process is also optimized to reduce the complexity and is based on post-CMOS compatible surface micromachining technology. Figure 1 | ||
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