A piezoelectric membrane enabled laterally-excited film bulk acoustic resonator (XBAR) device comprising a quartz substrate or a thin quartz membrane with predefined thickness; a metal pattern structured in the form of IDT, the IDT includes two sets of parallel fingers extended from the busbars, and the first and second sets of parallel fingers are interlocked; plurality of reflectors; and high-frequency signal (RF) is applied between busbars of IDT via pads for resonance. The device has interdigitated electrode (IDT) structure on a thinned piezoelectric substrate, optimized to propagate high-velocity Lamb waves for GHz range resonance. The XBAR device has a high resonance frequency, leveraging thin piezoelectric substrates for enhanced performance. The XBAR device boasts ease of fabrication, reduced fabrication steps, and cost-effectiveness compared to micromachined and standard SM-XBAR devices. The device resonates at 1.117 GHz resonance frequency and has a Q-factor of 549 and electromechanical coupling coefficient (kt2) of 3.489%.