A solidly-mounted laterally excited bulk wave resonators (XBARs) device comprises a borosilicate glass/molybdenum substrate, plurality of bragg reflectors deposited on the borosilicate substrate, a piezoelectric layer deposited on bragg reflectors (alternate layers of different material each layer of ?/10), an IDT on top of the piezoelectric layer. The thickness of the layer used in the acoustic Bragg reflector is less than the ?/4. Two types of Bragg reflectors one with alternating layers of W/SiO2 and another with Mo/SiO2 are being used to achieve the SM-XBAR similar result to micromachined XBAR, wherein, the pitch of the IDT finger, the width of IDT and the thickness of piezoelectric material, number of layer in acoustic Bragg reflector are optimized. The devices exhibit the resonance in 1.5 GHz range with a high-quality factor. The present invention has applications in 5th-generation filters for mobile communication and highly sensitive sensors.