A Magnetoresistance Based Current Sensor and Sensing Method Thereof

The existing current sensors are based on GMR spin-valve and TMR technologies. The
Multilayer GMR-based sensor disclosed in prior art is an open-loop, non-intrusive, core-based current sensor. The multilayer GMR is configured as a half-Wheatstone bridge. The sensor in the prior art uses coil-based biasing, which consumes more power and is therefore not preferable for practical applications.

A magnetoresistance-based current sensor measures the actual current flowing through a conductor by detecting the magnetic field with giant magnetoresistive sensing elements. The use of wide-range, low-hysteresis, thermally stable multilayer GMR sensing elements with magnetic biasing allows for measures the actual current flowing through a conductor with more accuracy.

• Electronics
• Automotive
• Consumer products
• Market for current sensor growing from approximately USD 1.98 billion in 2025 to
  over USD 3.5 billion by 2030 at a CAGR exceeding 12%

Accuracy of ±1.5 % over the Full Scale (FS) range at temperatures from -40 to 125°C

• measuring low (±1 A) to high current (±1000 A), both in DC and AC modes
• low hysteresis (< 1%), high linearity, wide dynamic range (> 300 G) and high
  thermal stability (> 200oC)
• Full Wheastone bridge operation
• Lower cost
• Higher accuracy
• Scalable